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RF2137
2
Typical Applications
* 4.8V AMPS Cellular Handsets * 4.8V CDMA/AMPS Handsets * 4.8V JCDMA/TACS Handsets * Driver Amplifier in Cellular Base Stations * Portable Battery-Powered Equipment
LINEAR POWER AMPLIFIER
2
POWER AMPLIFIERS
Product Description
The RF2137 is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 4-cell CDMA/AMPS hand-held digital cellular equipment, spread spectrum systems, and other applications in the 800MHz to 950MHz band. The device is self-contained with 50 input and the output can be easily matched to obtain optimum power, efficiency, and linearity characteristics at all recommended supply voltages.
3.90 0.10 -A0.43 0.05 0.05 0.05 Exposed Heat Sink
4.90 0.10 1.27 6.00 0.20 Dimensions in mm. 8 MAX 0 MIN 0.60 0.15 0.22 0.03 1.40 0.10
2.70 0.10
1.70 0.10
NOTES: 1. Shaded lead is pin 1. 2. Lead coplanarity - 0.10 with respect to datum "A".
Optimum Technology Matching(R) Applied
Si BJT Si Bi-CMOS
u
Package Style: SOIC-8 Slug
GaAs HBT SiGe HBT
GaAs MESFET Si CMOS
Features
* Single 4.2V to 6.0V Supply * Up to 29 dBm Linear Output Power * 27dB Gain With Analog Gain Control * 45% Linear Efficiency
VCC 1 RF IN 2 GND 3 PC 4 BIAS PACKAGE BASE GND
8 RF OUT 7 RF OUT 6 RF OUT 5 RF OUT
* On-board Power Down Mode * 800MHz to 950MHz Operation
Ordering Information
RF2137 RF2137 PCBA Linear Power Amplifier Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA
Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com
Rev B2 010720
2-115
RF2137
Absolute Maximum Ratings Parameter
Supply Voltage (No RF) Supply Voltage (POUT<31dBm) Power Control Voltage (VPC) DC Supply Current Input RF Power Output Load VSWR Ambient Operating Temperature Storage Temperature
Rating
-0.5 to +8.0 -0.5 to +6.0 -0.5 to +6.0 or VCC 800 +12 10:1 -30 to +90 -40 to +150
Unit
VDC VDC V mA dBm C C
Refer to "Handling of PSOP and PSSOP Products" on page 16-15 for special handling information.
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).
2
POWER AMPLIFIERS
Parameter
Overall
Usable Frequency Range Linear Gain Total Linear Efficiency Efficiency at Max Output OFF Isolation Second Harmonic Maximum Linear Output Power Adjacent Channel Power @ 885kHz offset Adjacent Channel Power @ 1.98MHz offset Max CW Output Power Input VSWR Output Load VSWR
Specification
Min. Typ. Max.
Unit
Condition
T=25 C, VCC =5.0 V, VPC =3.6V, Freq=824MHz to 849MHz
800 25 40 50
824 to 849 27 45 55 27 -30 28.5 -46
950 29
29 -44
MHz dB % % dB dBc dBm dBc
-58 31.5 +32.0 <2:1
-56
dBc dBm
VPC =0V,PIN =+6dBm Including Second Harmonic Trap IS-95A CDMA Modulation Pout = 28 dBm ACPR can be improved by trading off efficiency. Pout = 28 dBm
10:1 100 10 0.5 Vcc 5.0 40 15 6.0 100 20 ns A V V V mA mA
No oscillations
Power Down
Turn On/Off Time Total Current VPC "OFF" Voltage VPC "ON" Voltage "OFF" State Threshold Voltage at Input Threshold Voltage at Input Operating voltage VPC =4.0V
0.2 3.6 4.2
Power Supply
Power Supply Voltage Idle Current Current into VPC pin
2-116
Rev B2 010720
RF2137
Pin 1 Function VCC Description
Power supply for the driver stage, and interstage matching. Shunt inductance is required on this pin, which can be achieved by an inductor to VCC, with a decoupling capacitor on the VCC side. The value of the inductor is frequency dependent; 3.3nH is required for 830MHz, and 1.2nH for 950MHz. Instead of an inductor, a high impedance microstrip line can be used. RF input. This is a 50 input, but the actual input impedance depends on the interstage matching network connected to pin 1. An external DC blocking capacitor is required if this port is connected to a DC path to ground or a DC voltage. Ground connection. Keep traces physically short and connect immediately to the ground plane for best performance. Power Control. When this pin is "low", all circuits are shut off. A "low" is typically 0.5V or less at room temperature. During normal operation this pin is the power control. Control range varies from about 2V for 0dBm to VCC for +31dBm RF output power. The maximum power that can be achieved depends on the actual output matching. PC should never exceed 6.0V or VCC, whichever is lowest.
Interface Schematic
VCC
RF IN From Bias Stages
2
RF IN
See pin 1.
2
POWER AMPLIFIERS
3 4
GND PC
PC
To RF Transistors
5
RF OUT
RF Output and power supply for the output stage. The three output pins are combined, and bias voltage for the final stage is provided through these pins. The external path must be kept symmetric until combined to ensure stability. An external matching network is required to provide the optimum load impedance; see the application schematics for details. Same as pin 5. Same as pin 5. Same as pin 5. Ground connection. The backside of the package should be connected to the ground plane through a short path, i.e., vias under the device may be required.
RF OUT
From Bias Stages
6 7 8 Pkg Base
RF OUT RF OUT RF OUT GND
See pin 5. See pin 5. See pin 5.
Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
VCC C8 3.3 F C9 1 nF C5 100 pF L1 1.8 nH 2137400A 1 2 R1 10 k PC C7 1 nF 4 BIAS PACKAGE BASE 5 3 8 7 6 C1 1.5 pF C2 7.5 pF L2 4.7 nH C6 100 pF P1-1 P1 1 2 P1-3 C4 100 pF 3 VCC GND PC
RF IN J1
50 strip
C3 100 pF
L3 1.5 nH
50 strip
RF OUT J2
Rev B2 010720
2-117
RF2137
Evaluation Board Layout 1.559" X 1.191"
2
POWER AMPLIFIERS
2-118
Rev B2 010720

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